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Resistive switching memory effect of films with implanted
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10.1063/1.2832660
/content/aip/journal/apl/92/1/10.1063/1.2832660
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2832660
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The typical characteristics of the implanted samples and the unimplanted samples under voltage sweeping .

Image of FIG. 2.
FIG. 2.

Replots the characteristics of the implanted samples in log-log scale: (a) positive voltage region and (b) negative voltage region.

Image of FIG. 3.
FIG. 3.

The retention characteristics of the implanted samples at room temperature. Both resistance of the HRS and LRS are kept stable over time of .

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/content/aip/journal/apl/92/1/10.1063/1.2832660
2008-01-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching memory effect of ZrO2 films with Zr+ implanted
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2832660
10.1063/1.2832660
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