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Schematics of the light-induced programming of electrons and holes in NC flash memories, where represents the external gate voltage. The conduction and valence band profiles are depicted for each case. The region enclosed by the dashed lines represents the device region investigated in this work. The control and tunneling oxide thicknesses are and , respectively.
Comparison of the electric field dependence of the programming times of electrons and holes in hemispherical and NCs of different sizes ( and ).
Comparison between the characteristic times of the optical programming and voltage-induced programming in NCs. represents the voltage for which the given is produced across the NC. Positive (negative) quantities represent the electron (hole) programming. data were taken from a previous work using devices with exactly the same NC characteristics of the one investigated in this work (Ref. 5).
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