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Impact of germanium related defects on electrical performance of hafnium oxide
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10.1063/1.2883944
/content/aip/journal/apl/92/10/10.1063/1.2883944
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2883944
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The relative formation energy of (a) Ge at O3 sites, (b) Ge at O4 sites, and (c) interstitial Ge. Charge state with lowest relative formation energy is the most stable charge state at certain electron chemical potential.

Image of FIG. 2.
FIG. 2.

The local density of states of (a) neutral Ge at O3 sites and (b) charged Ge at O3 sites.

Image of FIG. 3.
FIG. 3.

The local density of states of (a) charged Ge at O4 sites, (b) charged Ge at O4 sites, and (c) neutral interstitial Ge.

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/content/aip/journal/apl/92/10/10.1063/1.2883944
2008-03-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of germanium related defects on electrical performance of hafnium oxide
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2883944
10.1063/1.2883944
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