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Demonstration of transverse-magnetic dominant gain in quantum dot semiconductor optical amplifiers
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10.1063/1.2883978
/content/aip/journal/apl/92/10/10.1063/1.2883978
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2883978
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic image of the columnar QDs fabricated by alternately stacking InAs and InGaAsP tensile-strained barrier layers.

Image of FIG. 2.
FIG. 2.

(a) Normalized TE- and TM-mode PL intensity vs dot height. The strains of barriers are changed from 0.5% to 4.2%. (b) Normalized TE- and TM-mode PL intensities vs tensile strain of barrier. The heights of columnar QDs are changed from .

Image of FIG. 3.
FIG. 3.

(a) Chip gain spectra between 1370 and with high columnar QDs and barrier tensile strain of 1.0%. (b) Chip gain spectra between 1370 and with high columnar QDs and barrier tensile strain of 3.7%.

Image of FIG. 4.
FIG. 4.

Chip gain characteristics at .

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/content/aip/journal/apl/92/10/10.1063/1.2883978
2008-03-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Demonstration of transverse-magnetic dominant gain in quantum dot semiconductor optical amplifiers
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2883978
10.1063/1.2883978
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