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Schematic illustration of the structure of our SWCNT switch prototype. Two interconnected suspended SWCNTs were assembled into the FET structure. Terminals a–c represent the source, drain, and gate electrode terminal, respectively.
SEM images of the SWCNT switch assembled on a gap electrode surface under an ac electric field of frequency and a peak to peak voltage for in DMF. The trenches in the gap fabricated by FIB were about wide and deep. (a) Two SWNT bundles protruded from the two sides of the trench; (b) one SWCNT bundle bridged across the trench beside the two protruding SWNTs; (c) only one individual SWNT bundle bridged across the trench after the assembly.
Switch properties of the SWCNT NEMS switch under two-terminal measurements. The voltage added on the source and drain electrodes (terminals a and b in Fig. 1) were 0.5 and , respectively. The change of on and off states were conducted by changing the voltage added on drain electrode above for .
Three-terminal switch effect of the SWCNT NEMS switch. The voltage added on the source and drain electrodes (terminals a and b in Fig. 1) were 1 and . The gate voltages were from (a) , (b) , and (c) .
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