Full text loading...
Cross-sectional TEM (on the left) and HRTEM (on the right) images of the as-grown sample structure (I).
(a) Magnetotransport measurements of an as grown sample [structure (I)] with an applied external field along the  direction. Anomalous Hall effect and negative and anisotropic magnetoresistances can be observed. The switching fields appear at the same field values in the longitudinal and Hall resistance. (b) SQUID hysteresis loops of the as-grown sample structure (I) with an applied magnetic field along the , , and  directions. The and  directions are neither magnetic hard nor easy axes. The  direction seems to be a magnetic easy axis.
(a) Schematic diagram of the ex situ prepared (110) or equivalent growth template, using (001) GaAs substrates. The relevant crystal directions are given. The wafers are cleaved outside the MBE system across the nonpolar (110) or surface. After growth, the GaMnAs film on the top is equipped with eight contacts. (b) Temperature dependent resistivity of thin as-grown GaMnAs films [structures (I) and (III)] grown on the (110) and cleaved planes. is marked by arrows. (c) Magnetotransport measurement, anomalous Hall Effect, and longitudinal resistance of an as-grown GaMnAs film [structure (I)], with an applied magnetic filed along the  direction.
Layer sequence, flux ratio, annealing procedure, and of all presented samples.
Article metrics loading...