banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ferromagnetic GaMnAs grown on (110) faced GaAs
Rent this article for


Image of FIG. 1.
FIG. 1.

Cross-sectional TEM (on the left) and HRTEM (on the right) images of the as-grown sample structure (I).

Image of FIG. 2.
FIG. 2.

(a) Magnetotransport measurements of an as grown sample [structure (I)] with an applied external field along the [110] direction. Anomalous Hall effect and negative and anisotropic magnetoresistances can be observed. The switching fields appear at the same field values in the longitudinal and Hall resistance. (b) SQUID hysteresis loops of the as-grown sample structure (I) with an applied magnetic field along the [110], , and [100] directions. The and [110] directions are neither magnetic hard nor easy axes. The [100] direction seems to be a magnetic easy axis.

Image of FIG. 3.
FIG. 3.

(a) Schematic diagram of the ex situ prepared (110) or equivalent growth template, using (001) GaAs substrates. The relevant crystal directions are given. The wafers are cleaved outside the MBE system across the nonpolar (110) or surface. After growth, the GaMnAs film on the top is equipped with eight contacts. (b) Temperature dependent resistivity of thin as-grown GaMnAs films [structures (I) and (III)] grown on the (110) and cleaved planes. is marked by arrows. (c) Magnetotransport measurement, anomalous Hall Effect, and longitudinal resistance of an as-grown GaMnAs film [structure (I)], with an applied magnetic filed along the [110] direction.


Generic image for table
Table I.

Layer sequence, flux ratio, annealing procedure, and of all presented samples.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ferromagnetic GaMnAs grown on (110) faced GaAs