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Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering
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10.1063/1.2890087
/content/aip/journal/apl/92/10/10.1063/1.2890087
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2890087
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD pattern of (Zn,Cr)Te film with the standard ZnTe reference pattern.

Image of FIG. 2.
FIG. 2.

(a) Plan-view HRTEM picture and (b) EDX mapping of the emission intensity for the (Zn,Cr)Te film.

Image of FIG. 3.
FIG. 3.

(a) Hysteresis loop of the sample at with applied magnetic field in the film plane. Inset shows the hysteresis loop in the scale, (b) FC magnetization as a function of the temperature under the applied field of , and ZFC magnetization measurement at various applied fields.

Image of FIG. 4.
FIG. 4.

(a) MCD spectrum at , (b) normalized MCD intensity and curve of the (Zn,Cr)Te film, (c) temperature dependent resistance, and (d) MR curves measured with magnetic field perpendicular to current direction at different temperatures. Inset shows the MR measured with magnetic field parallel to current direction at .

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/content/aip/journal/apl/92/10/10.1063/1.2890087
2008-03-11
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2890087
10.1063/1.2890087
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