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Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique
5.T. F. Kelly, T. T. Gribb, J. D. Olson, R. L. Martens, J. D. Shepard, S. A. Wiener, T. C. Kunicki, R. M. Ulfig, D. R. Lenz, E. M. Strennen, E. Oltman, J. H. Bunton, and D. R. Strait, Microsc. Microanal. 10, 373 (2004).
12.The isoconcentration surface of the poly-Si gate and the gate oxide is defined by the intermediate value between the concentration of the Si atoms observed in the poly-Si gate and in the gate oxide. The isoconcentration surface of the gate oxide and the substrate is also defined by the same way.
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