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Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique
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10.1063/1.2891081
/content/aip/journal/apl/92/10/10.1063/1.2891081
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2891081
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

3D elemental map of the MOSFET structure sample. As (yellow), B (white), O (blue), and Si (magenta). For visual clarity, only 5% of the Si atoms are plotted.

Image of FIG. 2.
FIG. 2.

Mass spectrum of the MOSFET structure sample.

Image of FIG. 3.
FIG. 3.

1D As atom distribution in the depth direction from the 3DAP and SIMS analyses.

Image of FIG. 4.
FIG. 4.

Enlarged view of the 3D elemental map around the gate oxide. As (yellow) and O (blue). Both interfaces (polycrystalline Si gate/gate oxide and gate oxide/Si substrate) are drawn by wire frame (magenta).

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/content/aip/journal/apl/92/10/10.1063/1.2891081
2008-03-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2891081
10.1063/1.2891081
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