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Drift mobility and the frequency response of diode connected organic transistors
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1.
1.P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelley, D. V. Muyres, and S. D. Theiss, Appl. Phys. Lett. 82, 3964 (2003).
http://dx.doi.org/10.1063/1.1579554
2.
2.L. Torsi and A. Dodabalpur, Anal. Chem. 77, 380A (2005).
3.
3.C. J. Brabec, Sol. Energy Mater. Sol. Cells 83, 273 (2004).
http://dx.doi.org/10.1016/j.solmat.2004.02.030
4.
4.B. K. Crone, A. Dodabalapur, R. Sarpenshkar, R. W. Filas, Y. Y. Lin, Z. Bao, J. H. O’Neill, W. Li, and H. E. Katz, J. Appl. Phys. 89, 5125 (2001).
http://dx.doi.org/10.1063/1.1362635
5.
5.L. Zhou, A. Wanga, S. Wu, J. Sun, S. Park, and T. N. Jackson, Appl. Phys. Lett. 88, 083502 (2006).
http://dx.doi.org/10.1063/1.2178213
6.
6.K. Tsukagoshi, J. Tanabe, I. Yagi, K. Shigeto, K. Yanagisawa, and Y. Aoyagi, J. Appl. Phys. 99, 064506 (2006).
http://dx.doi.org/10.1063/1.2184430
7.
7.S. Kobayashi, T. Takenobu, S. Mori, A. Fujiwara, and Y. Iwasa, Appl. Phys. Lett. 82, 4581 (2003).
http://dx.doi.org/10.1063/1.1577383
8.
8.Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Trans. Electron Devices 18, 87 (1997).
http://dx.doi.org/10.1109/55.556089
9.
9.J. G. Laquindanum, R. E. Katz, A. J. Lovinger, and A. Dodabalapur, Chem. Mater. 8, 2542 (1996).
http://dx.doi.org/10.1021/cm9603664
10.
10.P. V. Pesavento, R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, J. Appl. Phys. 96, 7312 (2004).
http://dx.doi.org/10.1063/1.1806533
11.
11.S. C. Lim, S. H. Kim, J. H. Lee, H. Y. Yu, Y. Park, D. Kim, and T. Zyung, Mater. Sci. Eng., B 121, 211 (2005).
http://dx.doi.org/10.1016/j.mseb.2005.03.032
12.
12.H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E. P. Woo, Science 290, 2124 (2000).
http://dx.doi.org/10.1126/science.290.5499.2123
13.
13.L. Bürgi, R. H. Friend, and H. Sirringhaus, Appl. Phys. Lett. 82, 1482 (2003).
http://dx.doi.org/10.1063/1.1556564
14.
14.L. Dunn, D. Basu, L. Wang, and A. Dodabalapur, Appl. Phys. Lett. 88, 063507 (2006).
http://dx.doi.org/10.1063/1.2172023
15.
15.D. Basu, L. Wang, L. Dunn, B. Yoo, S. Nadkami, and A. Dodabalapur, Appl. Phys. Lett. 89, 242104 (2006).
http://dx.doi.org/10.1063/1.2405378
16.
16.T. Hori, Gate Dielectrics and MOS ULSIs (Springer, Berlin, 1997).
17.
17.J. Tate, J. Rogers, C. Jones, B. Vyas, D. Murphy, W. Li, Z. Bao, R. Slusher, A. Dodabalapur, and H. Katz, Langmuir 16, 6054 (2000).
http://dx.doi.org/10.1021/la991646b
18.
18.J. R. Burns, RCA Rev. 30, 15 (1969).
19.
19.B. G. Streetman and S. Banerjee, Solid State Electronic Devices, 5th ed. (Prentice-Hall, Upper Saddle River, NJ, 1999).
20.
20.M. Cavallini, P. Stoliar, J. Moulin, M. Surin, P. Leclère, R. Lazzaroni, D. Breiby, J. Andreasen, M. Nielsen, P. Sonar, A. Grimsdale, K. Müllen, and F. Biscarini, Nano Lett. 5, 2422 (2005).
http://dx.doi.org/10.1021/nl051685+
21.
21.B. Ries and H. Bässler, Phys. Rev. B 35, 2295 (1987).
http://dx.doi.org/10.1103/PhysRevB.35.2295
22.
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/content/aip/journal/apl/92/10/10.1063/1.2891877
2008-03-10
2014-09-21

Abstract

A method to characterize the frequency response of an organic field effect transistor(FET) is presented. Analysis then shows a method to calculate the average drift mobility from the frequency at which a pole appears in the response. This pole is believed to appear at the point where charge carriers can no longer fully traverse the channel in one period of the input signal. The dc output characteristics of the device are also described, and saturation mobility values are derived. This saturation mobility and the drift mobility calculated from the frequency response are comparable. This method can be used in determining the drift mobility in other materials such as single nanowires in the FET configuration.

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Scitation: Drift mobility and the frequency response of diode connected organic transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2891877
10.1063/1.2891877
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