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(a) Schematic diagram of the cantilever-type NEM switch composed of the suspended beam and the bottom electrode. (b) SEM photograph of the cantilever-type NEM switch fabricated by using conventional top-down CMOS fabrication technology.
SEM photographs of (a) the disappeared beam by the localized contact melting, which has no initial oxide layer and (b) the successfully fabricated and flat cantilever-type NEM switch by employing an ultrathin oxide layer and an annealing process. The inset shows the suspended beam fabricated with initial oxide layer and no annealing process.
(a) hysteresis curve of the fabricated cantilever-type NEM switch . (b) Magnified view of the pull-in region, showing ideal on/off current characteristics.
(a) plot of the fabricated cantilever-type NEM switch under dc bias in air ambient. (b) The output current of the cantilever-type NEM switch as a function of time under ac bias in air ambient. Note that an ac bias with a peak voltage of and a square wave of were applied to the bottom electrode.
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