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Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures
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10.1063/1.2894508
/content/aip/journal/apl/92/10/10.1063/1.2894508
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2894508
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the competition between photon emission and thermally activated LO-phonon emission by electrons in the upper laser subband of a terahertz QC structure.

Image of FIG. 2.
FIG. 2.

Conduction-band profile and squared envelope functions of (a) the and (b) the QC gain media considered in this study. The two structures are plotted in the presence of an external field of (a) and (b) . The layer thicknesses of a single stage, starting from the injection barrier (indicated by the arrow) and moving downstream, are for the GaN structure and for the GaAs structure (the boldfaced numbers refer to the barrier layers).

Image of FIG. 3.
FIG. 3.

Calculated fractional population inversion of the terahertz QC structures of Fig. 2(a) (solid line) and Fig. 2(b) (dotted line) vs temperature.

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/content/aip/journal/apl/92/10/10.1063/1.2894508
2008-03-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2894508
10.1063/1.2894508
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