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(a) Schematic cross section of the -type LDMOS device used in this paper. (b) The experimental setup of charge pumping measurement.
(a) degradation and shift as a function of stress time for devices stressed under and ranging from . Higher produces more degradation, while shift is little for devices stressed under . (b) vs characteristics under various reveal that Kirk effect is not significant under high .
Stress-induced as a function of for the devices shown in Fig. 2(a) stressed for .
Location dependent and as well as degradation resulted from at different locations are simulated. The drain-side polygate edge is defined as 0 in coordinate. in region produces the most degradation, while in region produces the least degradation.
Relationship between degradation and average in region is shown. A unified relationship is observed for devices stressed under . For the device stressed at , larger degradation is observed because in region also contributes to degradation.
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