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Directional growth of Ge on GaAs at using plasma-generated nanocrystals
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10.1063/1.2895636
/content/aip/journal/apl/92/10/10.1063/1.2895636
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2895636
/content/aip/journal/apl/92/10/10.1063/1.2895636
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/content/aip/journal/apl/92/10/10.1063/1.2895636
2008-03-11
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Directional growth of Ge on GaAs at 175°C using plasma-generated nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2895636
10.1063/1.2895636
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