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Directional growth of Ge on GaAs at using plasma-generated nanocrystals
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10.1063/1.2895636
/content/aip/journal/apl/92/10/10.1063/1.2895636
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2895636

Figures

Image of FIG. 1.
FIG. 1.

Ge nanocrystals on C-membrane Cu grid (sample M10). Image shows that the particles arrive at the surface as independent and mobile objects. Inset shows an image taken at greater magnification of completely crystallized Ge particles.

Image of FIG. 2.
FIG. 2.

Ge nanocrystals on C-membrane Cu grid (sample N9). Deposition conditions lead to more complete coverage of surface. The inset is an image taken at greater magnification showing complete crystallization of particles.

Image of FIG. 3.
FIG. 3.

Cross-sectional image of sample N9 deposited on GaAs. The inset is a digital zoom on the interface region. Despite an amorphous region at the interface, directional growth of Ge still occurs.

Image of FIG. 4.
FIG. 4.

Raman scattering spectrum of Ge film on GaAs for sample M10, as well as results of peak fitting routine. The narrow peak attributed to Ge is located at and the peak attributed to GaAs is located at , with widths of 3.9 and , respectively.

Tables

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Table I.

PECVD growth conditions: , interelectrode distance , (SCCM denotes cubic centimeter per minute at STP), , rate of 2% in .

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/content/aip/journal/apl/92/10/10.1063/1.2895636
2008-03-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Directional growth of Ge on GaAs at 175°C using plasma-generated nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2895636
10.1063/1.2895636
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