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Ge nanocrystals on C-membrane Cu grid (sample M10). Image shows that the particles arrive at the surface as independent and mobile objects. Inset shows an image taken at greater magnification of completely crystallized Ge particles.
Ge nanocrystals on C-membrane Cu grid (sample N9). Deposition conditions lead to more complete coverage of surface. The inset is an image taken at greater magnification showing complete crystallization of particles.
Cross-sectional image of sample N9 deposited on GaAs. The inset is a digital zoom on the interface region. Despite an amorphous region at the interface, directional growth of Ge still occurs.
Raman scattering spectrum of Ge film on GaAs for sample M10, as well as results of peak fitting routine. The narrow peak attributed to Ge is located at and the peak attributed to GaAs is located at , with widths of 3.9 and , respectively.
PECVD growth conditions: , interelectrode distance , (SCCM denotes cubic centimeter per minute at STP), , rate of 2% in .
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