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Solar-blind AlGaN-based photodetectors with high breakdown voltage and detectivity
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10.1063/1.2895643
/content/aip/journal/apl/92/10/10.1063/1.2895643
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2895643
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Spectral transmission of the wafer that was used in the fabrication of the detectors and (b) scanning electron microscopy image of diameter fabricated devices.

Image of FIG. 2.
FIG. 2.

Dark current of a diameter AlGaN photodetector.

Image of FIG. 3.
FIG. 3.

(a) Spectral QE of the photodetector for varying reverse bias voltages and (b) responsivity of the photodetector for different reverse bias voltages.

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/content/aip/journal/apl/92/10/10.1063/1.2895643
2008-03-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2895643
10.1063/1.2895643
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