1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Temperature dependence on current-voltage characteristics of Schottky photodiode
Rent:
Rent this article for
USD
10.1063/1.2896298
/content/aip/journal/apl/92/10/10.1063/1.2896298
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2896298
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Forward characteristics of a Schottky photodiode at various temperatures. The inset shows the cross-sectional schematic diagram of the device structure.

Image of FIG. 2.
FIG. 2.

Plots of vs of the oxidized Schottky photodiode at a small forward current at different temperatures.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the ideality factor (left scale) and barrier height (right scale) for the oxidized Schottky photodiode.

Image of FIG. 4.
FIG. 4.

Experimental values of as a function of for the oxidized Schottky photodiode. The solid and dashed curves represent the theoretical expression of TFE with and TE with , respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/92/10/10.1063/1.2896298
2008-03-11
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence on current-voltage characteristics of Ni∕Au–Al0.45Ga0.55N Schottky photodiode
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2896298
10.1063/1.2896298
SEARCH_EXPAND_ITEM