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Forward characteristics of a Schottky photodiode at various temperatures. The inset shows the cross-sectional schematic diagram of the device structure.
Plots of vs of the oxidized Schottky photodiode at a small forward current at different temperatures.
Temperature dependence of the ideality factor (left scale) and barrier height (right scale) for the oxidized Schottky photodiode.
Experimental values of as a function of for the oxidized Schottky photodiode. The solid and dashed curves represent the theoretical expression of TFE with and TE with , respectively.
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