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Artificial pinning enhancement by multilayer nanostructures in thin films
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10.1063/1.2896305
/content/aip/journal/apl/92/10/10.1063/1.2896305
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2896305
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD profiles for the Ni-layer and pure films. The (0001) and (0002) peaks of can be seen at the same position for both films. The profile for the Si (100) substrate is also shown.

Image of FIG. 2.
FIG. 2.

relations for Ni-layer and the pure films in parallel and the perpendicular fields at . The lines are guides to the eye.

Image of FIG. 3.
FIG. 3.

Schematic illustration of cross sectional image of (a) a Ni-layer film and (b) a pure film. The multilayer structure should be effective for flux pinning in parallel fields. The grain boundaries between the columnar grains are considered to be a strong pinning center in perpendicular fields.

Image of FIG. 4.
FIG. 4.

Field dependence of at . The solid lines correspond to the curve shape predicted for grain boundary pinning by Eq. (1). The broken line represents the case of grain boundary flux shear, which corresponds to the model described by Eq. (2).

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/content/aip/journal/apl/92/10/10.1063/1.2896305
2008-03-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Artificial pinning enhancement by multilayer nanostructures in MgB2∕Ni thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2896305
10.1063/1.2896305
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