banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Artificial pinning enhancement by multilayer nanostructures in thin films
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

XRD profiles for the Ni-layer and pure films. The (0001) and (0002) peaks of can be seen at the same position for both films. The profile for the Si (100) substrate is also shown.

Image of FIG. 2.
FIG. 2.

relations for Ni-layer and the pure films in parallel and the perpendicular fields at . The lines are guides to the eye.

Image of FIG. 3.
FIG. 3.

Schematic illustration of cross sectional image of (a) a Ni-layer film and (b) a pure film. The multilayer structure should be effective for flux pinning in parallel fields. The grain boundaries between the columnar grains are considered to be a strong pinning center in perpendicular fields.

Image of FIG. 4.
FIG. 4.

Field dependence of at . The solid lines correspond to the curve shape predicted for grain boundary pinning by Eq. (1). The broken line represents the case of grain boundary flux shear, which corresponds to the model described by Eq. (2).


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Artificial pinning enhancement by multilayer nanostructures in MgB2∕Ni thin films