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Influence of crystalline quality of low-temperature GaN cap layer on current collapse in heterostructure field-effect transistors
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10.1063/1.2896311
/content/aip/journal/apl/92/10/10.1063/1.2896311
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2896311
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics measured under dc-mode and pulse-mode drain sweeping for HFETs (a) without a LT-GaN cap layer and with a LT-GaN cap layer grown at (b) , (c) , (d) , (e) , and (f) .

Image of FIG. 2.
FIG. 2.

Variation of the x-ray (0004) rocking curve FWHM with respect to the GaN growth temperature.

Image of FIG. 3.
FIG. 3.

Electron diffraction images of the cross sections in the (11-20) plane of LT-GaN films for LT-GaN growth temperatures of (a) , (b) , (c) , and (d) .

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/content/aip/journal/apl/92/10/10.1063/1.2896311
2008-03-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN∕GaN heterostructure field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2896311
10.1063/1.2896311
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