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Influence of crystalline quality of low-temperature GaN cap layer on current collapse in heterostructure field-effect transistors
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10.1063/1.2896311
/content/aip/journal/apl/92/10/10.1063/1.2896311
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2896311
/content/aip/journal/apl/92/10/10.1063/1.2896311
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/content/aip/journal/apl/92/10/10.1063/1.2896311
2008-03-11
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN∕GaN heterostructure field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2896311
10.1063/1.2896311
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