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Gold nanoparticle-pentacene memory transistors
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We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold(Au)nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift and on/off drain current ratio of are obtained. The hole field-effect mobility of the transistor is similar in the on and off states (less than a factor of 2). Charge retention times up to are observed. The memory effect is mainly attributed to the Aunanoparticles.
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