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Back-illuminated separate absorption and multiplication GaN avalanche photodiodes
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View: Figures


Image of FIG. 1.
FIG. 1.

Left axis: electric field profile calculated as a function of reverse bias in the SAM APDs. Right axis: relative absorption for an absorption coefficient of . The basic structure of the device is depicted at the top.

Image of FIG. 2.
FIG. 2.

Left axis: dark and light currents measured in the SAM APDs; the dashed line represents the calculated photocurrent. Right axis: calculated gain.

Image of FIG. 3.
FIG. 3.

(a) Spectral response measured in the SAM APDs as a function of reverse bias. (b) Wavelength of the responsivity peak and fall-off wavelength as a function of reverse bias. The arrows indicate the redshift of the response cutoff at low voltages and the blueshift induced by the multiplication process near breakdown. The inset shows the band tailing absorption processes that may account for this behavior.

Image of FIG. 4.
FIG. 4.

(a) Spectral noise power obtained near breakdown. The broken axis separates the low frequency range, in which the contribution dominates, from the midfrequency range, dominated by the multiplication noise. (b) Calculated NEP vs reverse bias voltage.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Back-illuminated separate absorption and multiplication GaN avalanche photodiodes