1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
f
Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/92/10/10.1063/1.2897238
1.
1.E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1967).
2.
2.I. Torres, D. M. Taylor, and E. Itoh, Appl. Phys. Lett. 85, 314 (2004).
http://dx.doi.org/10.1063/1.1769081
3.
3.I. Torres and D. M. Taylor, J. Appl. Phys. 98, 073710 (2005).
http://dx.doi.org/10.1063/1.2081109
4.
4.A. von Hippel, Dielectrics and Waves (Wiley, New York, 1954), p. 228.
5.
5.S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley Interscience, New York, 1981), p. 382.
6.
6.D. M. Taylor and N. Alves, J. Appl. Phys. 103, 054509 (2008).
7.
7.C. G. M. Fonstad, Microelectronic Devices and Circuits, International Edition (McGraw-Hill, New York, 1994), p. 254.
8.
8.E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley Interscience, New York, 2003), p. 830.
9.
9.M. J. C. M. Vissenberg and M. Matters, Phys. Rev. B 57, 12964 (1998).
10.
journal-id:
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2897238
Loading
View: Figures

Figures

Image of FIG. 1.

Click to view

FIG. 1.

(a) Capacitance and (b) loss (conductance/angular frequency) vs voltage plots obtained at six different frequencies in the range of for P3HT MIS diodes at . The sharp rise in loss at for negative voltages arises from insulator leakage.

Image of FIG. 2.

Click to view

FIG. 2.

Energy diagrams showing the interaction of holes with an interface state in (a) silicon and (b) a semiconductor with localized states extending into the bandgap. (c) Equivalent circuit representation of a MIS device with interface states biased into depletion.

Image of FIG. 3.

Click to view

FIG. 3.

Interface trap loss, , extracted from measured loss data and plotted as a function of applied voltage. Here, the data sets obtained at all frequencies up to are shown.

Image of FIG. 4.

Click to view

FIG. 4.

Density of hole traps at the P3HT/polysilsesquioxane interface plotted as a function of energy above the bulk Fermi level .

Loading

Article metrics loading...

/content/aip/journal/apl/92/10/10.1063/1.2897238
2008-03-13
2014-04-19

Abstract

Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, -type semiconductor poly(3-hexylthiophene). After vacuum annealing at , interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from over an energy range extending from above the bulk Fermi level.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/92/10/1.2897238.html;jsessionid=yvug7xp0se0k.x-aip-live-02?itemId=/content/aip/journal/apl/92/10/10.1063/1.2897238&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2897238
10.1063/1.2897238
SEARCH_EXPAND_ITEM