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Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
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Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, -type semiconductor poly(3-hexylthiophene). After vacuum annealing at , interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from over an energy range extending from above the bulk Fermi level.
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