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Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
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/content/aip/journal/apl/92/10/10.1063/1.2897238
2008-03-13
2014-07-28

Abstract

Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, -type semiconductor poly(3-hexylthiophene). After vacuum annealing at , interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from over an energy range extending from above the bulk Fermi level.

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Scitation: Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2897238
10.1063/1.2897238
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