No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
1.E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1967).
4.A. von Hippel, Dielectrics and Waves (Wiley, New York, 1954), p. 228.
5.S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley Interscience, New York, 1981), p. 382.
6.D. M. Taylor and N. Alves, J. Appl. Phys. 103, 054509 (2008).
7.C. G. M. Fonstad, Microelectronic Devices and Circuits, International Edition (McGraw-Hill, New York, 1994), p. 254.
8.E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley Interscience, New York, 2003), p. 830.
9.M. J. C. M. Vissenberg and M. Matters, Phys. Rev. B 57, 12964 (1998).
Article metrics loading...
Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, -type semiconductor poly(3-hexylthiophene). After vacuum annealing at , interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from over an energy range extending from above the bulk Fermi level.
Full text loading...
Most read this month