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(a) characteristics for a single crystal of at in zero magnetic field. Inset: Change in resistance as a function of the maximum voltage (resistance-sensing voltage ). (b) Temperature profiles of resistance in warming runs at after applying (0, 450, and ) at . Data measured after magnetic FC at are also shown. Inset: A schematic diagram of the circuit; the electrode distance , the electrode area , and the load resistance .
(a) Variation of magnetization and resistance for a single crystal of (, ) at at after FC. Dotted vertical arrows indicate the timing for applying bias voltages. (b) characteristics corresponding to the bias voltage sweeps . Inset: Resistance vs magnetization at at after FC with various magnitudes of magnetic fields.
Switching operation of magnetization (filled circle) and resistance (open circle) for a single crystal (, ) at at after FC. The magnetization and resistance were measured at regular intervals. Vertical arrows indicate the timing for applying the switching voltages.
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