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High-power semiconductor disk laser based on submonolayer quantum dots
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10.1063/1.2898165
/content/aip/journal/apl/92/10/10.1063/1.2898165
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2898165
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the SML-QD SDL. (a) Refractive index profile (black) and calculated optical field (gray) as a function of vertical position . Only a part of the Bragg mirror is shown. (b) Group of threefold stacked SML-QD layers. (c) Expanded sketch of a single SML-QD layer showing InAs SML depositions in GaAs.

Image of FIG. 2.
FIG. 2.

(a) PL of a single SML structure in a QD test sample without DBR at different excitation densities. (b) Normalized surface-emitting PL, measured reflectivity, and simulated reflectivity, of the SML-QD SDL structure.

Image of FIG. 3.
FIG. 3.

Light output characteristics with different output couplers of the SDL cavity comprising a SML QD gain medium. Inset: laser spectrum recorded at output power.

Image of FIG. 4.
FIG. 4.

Spatial intensity profile of the output beam with Gaussian fit for two orthogonal directions. Upper and lower spectra refer to vertical and horizontal directions, respectively.

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/content/aip/journal/apl/92/10/10.1063/1.2898165
2008-03-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2898165
10.1063/1.2898165
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