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High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids
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Image of FIG. 1.

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FIG. 1.

(a) Chemical structures of the ILs used in this device; EMIFSI (left) and EMITFSI (right). (b) Capacitance of the ILs as a function of frequency measured by the ac impedance technique.

Image of FIG. 2.

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FIG. 2.

Transfer characteristics of the EDL OFETs with EMIFSI (a) and EMITFSI (b). The dotted lines are drawn to estimate the hole mobility of the devices. The arrows indicate the direction of the sweeps. The inset shows a schematic illustration of the dual-gate rubrene single crystal field-effect transistor with ionic liquid electrolyte.

Image of FIG. 3.

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FIG. 3.

Output characteristics of the devices with EMIFSI (a) and EMITFSI (b) with different gate voltages (, , , , , respectively).

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/content/aip/journal/apl/92/10/10.1063/1.2898203
2008-03-13
2014-04-16

Abstract

We report high-mobility rubrene single-crystalfield-effect transistors with ionic-liquid (IL) electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than even at . With high carrier mobility of in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only , which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the IL/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces.

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Scitation: High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/10/10.1063/1.2898203
10.1063/1.2898203
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