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Low-voltage organic thin-film transistors with -phosphonic acid molecular dielectric monolayers
6.M. Zirkl, A. Haase, A. Fian, H. Schon, C. Sommer, G. Jakopic, G. Leising, B. Stadlober, I. Graz, N. Gaar, R. Schwodiauer, S. Bauer-Gogonea, and S. Bauer, Adv. Mater. (Weinheim, Ger.) 19, 2241 (2007).
11.M. Halik, H. Klauk, U. Zschieschang, G. Schmid, C. Dehm, M. Schutz, S. Maisch, F. Effenberger, M. Brunnbauer, and F. Stellacci, Nature (London) 431, 963 (2004).
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Pentacene-based organic thin-film transistors (OTFTs) have been fabricated using -phosphonic acidself-assembledmonolayers(SAMs) on top of aluminum oxide as the gate dielectrics. With ultrathin dielectrics, high capacitances up to and low leakage current densities of at could be obtained, allowing operation of OTFTs within . Vast improvements in the gate leakage current ( orders), on/off current ratio (1 order), and subthreshold slope down to are achieved compared to control devices without SAMs. The OTFTs with pentacene vapor deposited at room temperature on SAM dielectrics-modified substrates exhibit mobilities of , on/off current ratios of , and threshold voltages of .
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