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Gas-switching sequence to fabricate heterointerface InGaP on GaAs; (a) typical gas-switching sequence (called the standard sequence) and (b) optimized gas-switching sequence (called GIIIP sequence).
Change in subsurface thickness in GaAs during growth and then purge using an optimized subsurface model with optimized kinetic parameters.
STEM images of heterointerface fabricated using (a) standard gas-switching sequence [Fig. 1(a)] and (b) GIIIP gas-switching sequence [Fig. 1(b)].
-contrast intensity profiles constructed from STEM images in Fig. 3. Solid lines are from normal signal from STEM images and dotted lines are from the -contrast signal fitted with Eq. (1). and represent averaged -contrast intensity of InGaP and GaAs, respectively.
PL spectra of SQW fabricated at room temperature using standard gas-switching sequence and GIIIP gas-switching sequence.
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