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Abrupt heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy
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10.1063/1.2884694
/content/aip/journal/apl/92/11/10.1063/1.2884694
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/11/10.1063/1.2884694
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Figures

Image of FIG. 1.
FIG. 1.

Gas-switching sequence to fabricate heterointerface InGaP on GaAs; (a) typical gas-switching sequence (called the standard sequence) and (b) optimized gas-switching sequence (called GIIIP sequence).

Image of FIG. 2.
FIG. 2.

Change in subsurface thickness in GaAs during growth and then purge using an optimized subsurface model with optimized kinetic parameters.

Image of FIG. 3.
FIG. 3.

STEM images of heterointerface fabricated using (a) standard gas-switching sequence [Fig. 1(a)] and (b) GIIIP gas-switching sequence [Fig. 1(b)].

Image of FIG. 4.
FIG. 4.

-contrast intensity profiles constructed from STEM images in Fig. 3. Solid lines are from normal signal from STEM images and dotted lines are from the -contrast signal fitted with Eq. (1). and represent averaged -contrast intensity of InGaP and GaAs, respectively.

Image of FIG. 5.
FIG. 5.

PL spectra of SQW fabricated at room temperature using standard gas-switching sequence and GIIIP gas-switching sequence.

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/content/aip/journal/apl/92/11/10.1063/1.2884694
2008-03-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Abrupt InGaP∕GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/11/10.1063/1.2884694
10.1063/1.2884694
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