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Incorporation of Ge on GaN(0001)
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10.1063/1.2894192
/content/aip/journal/apl/92/11/10.1063/1.2894192
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/11/10.1063/1.2894192
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) STM image of a GaN clean surface exhibiting and reconstructions; a spiral formed during GaN growth is circled. (Sample bias: , tunneling current: , area: .) (b) After Ge deposition, a reconstruction with parallel dark lines is observed in place of the region. (Sample bias: , tunneling current , area: .)

Image of FIG. 2.
FIG. 2.

(a) Atomic resolution STM image of the new phase (area: . (b) Enlarged view of the region near the missing atomic row. The solid and dashed lines mark the positions of the atomic rows, with relative displacement of . (Sample bias: , tunneling current: , area: .)

Image of FIG. 3.
FIG. 3.

Calculated surface LDOSs for (a) and (b) with Ge incorporated; (c) Ga adatom and (d) Ge adatom on Ga bilayers; and (e) Ge substituted for Ga in the top layer of the Ga bilayer. The dashed blue (solid orange) lines correspond to the LDOS of the surface Ga (Ge) atoms; energies are relative to the Fermi energy.

Image of FIG. 4.
FIG. 4.

Proposed structure for the reconstruction. Side view: Ge adatom on a Ga bilayer. Top view: hcp and fcc stacking of the first layer Ga, separated by a domain wall (missing atomic row).

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/content/aip/journal/apl/92/11/10.1063/1.2894192
2008-03-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Incorporation of Ge on GaN(0001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/11/10.1063/1.2894192
10.1063/1.2894192
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