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(a) STM image of a GaN clean surface exhibiting and reconstructions; a spiral formed during GaN growth is circled. (Sample bias: , tunneling current: , area: .) (b) After Ge deposition, a reconstruction with parallel dark lines is observed in place of the region. (Sample bias: , tunneling current , area: .)
(a) Atomic resolution STM image of the new phase (area: . (b) Enlarged view of the region near the missing atomic row. The solid and dashed lines mark the positions of the atomic rows, with relative displacement of . (Sample bias: , tunneling current: , area: .)
Calculated surface LDOSs for (a) and (b) with Ge incorporated; (c) Ga adatom and (d) Ge adatom on Ga bilayers; and (e) Ge substituted for Ga in the top layer of the Ga bilayer. The dashed blue (solid orange) lines correspond to the LDOS of the surface Ga (Ge) atoms; energies are relative to the Fermi energy.
Proposed structure for the reconstruction. Side view: Ge adatom on a Ga bilayer. Top view: hcp and fcc stacking of the first layer Ga, separated by a domain wall (missing atomic row).
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