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Cross-section HRTEM image of the heterostructure. The inset shows an enlarged HRTEM image of interface.
XRD spectrum of the epitaxial ZnO film on buffered Si (111): (a) scan, (b) scans for ZnO and Si (220), and (c) -scan rocking curve of ZnO (0002).
Current-voltage characteristic of the diode. The top left inset illustrates the diode structure, the top right inset shows the ohmic contact between Au and , and the bottom right inset shows the band diagram of the double back-to-back Schottky structure.
(a) Room-temperature PL spectrum from the ZnO film on buffered Si. (b) Room-temperature EL spectra from the LED at various injection currents. The inset in (b) shows the photo of emitting LED at and .
Light output intensity as a function of injection current for the LED.
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