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Epitaxially grown heterostructured light-emitting diode
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10.1063/1.2896611
/content/aip/journal/apl/92/11/10.1063/1.2896611
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/11/10.1063/1.2896611
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-section HRTEM image of the heterostructure. The inset shows an enlarged HRTEM image of interface.

Image of FIG. 2.
FIG. 2.

XRD spectrum of the epitaxial ZnO film on buffered Si (111): (a) scan, (b) scans for ZnO and Si (220), and (c) -scan rocking curve of ZnO (0002).

Image of FIG. 3.
FIG. 3.

Current-voltage characteristic of the diode. The top left inset illustrates the diode structure, the top right inset shows the ohmic contact between Au and , and the bottom right inset shows the band diagram of the double back-to-back Schottky structure.

Image of FIG. 4.
FIG. 4.

(a) Room-temperature PL spectrum from the ZnO film on buffered Si. (b) Room-temperature EL spectra from the LED at various injection currents. The inset in (b) shows the photo of emitting LED at and .

Image of FIG. 5.
FIG. 5.

Light output intensity as a function of injection current for the LED.

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/content/aip/journal/apl/92/11/10.1063/1.2896611
2008-03-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxially grown n-ZnO∕MgO∕TiN∕n+-Si(111) heterostructured light-emitting diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/11/10.1063/1.2896611
10.1063/1.2896611
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