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High-phase-purity zinc-blende InN on -plane sapphire substrate with controlled nitridation pretreatment
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Image of FIG. 1.
FIG. 1.

-scan XRD analyses. These InN thin films were grown on -plane sapphire substrates with different substrate nitridation times of (a) 0 (sample A), (b) 15 (sample B), and (c) (sample C). The phase of InN changes from wurtzite to zinc blende with increasing nitridation time.

Image of FIG. 2.
FIG. 2.

TEM images. (a) A -thick zb-InN film grown on -plane sapphire substrate (sample C). (b) Corresponding SAED pattern taken at interface shows a growth relationship of . (c) High-resolution atomic image reveals an ultrathin interlayer, generated through nitridation process, between the InN film and the sapphire substrate. (d) Directly deposited InN on sapphire substrate exhibits sharp interface without any interlayer (sample A).

Image of FIG. 3.
FIG. 3.

Low-temperature PL measured at and absorption spectra measured at of zb-InN film, w-InN film, and NDF MCs, respectively. (a)The zb-InN film shows a very low PL emission peak at , which is 68 and lower than w-InN film and NDF MCs, respectively. The absorption spectrum of the zb-InN film also shows a rather low edge at . (b) The PL peak energy vs temperature reveals that all the peak energies of zb-InN film locate below those of w-InN and NDF MCs.


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Table I.

Growth conditions of the InN films.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment