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Positive colossal magnetoresistance effect in heterostructure
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10.1063/1.2900963
/content/aip/journal/apl/92/11/10.1063/1.2900963
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/11/10.1063/1.2900963
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction pattern of the heterostructure. The insets show the (100) and (200) peaks of the LSMO film and substrate.

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics of the heterostructure at different temperatures. Inset: the schematic circuit of the heterostructure. The voltage polarity is defined as the electrode on the LSMO layer.

Image of FIG. 3.
FIG. 3.

Current-voltage characteristics of the heterostructure under the applied magnetic field at and .

Image of FIG. 4.
FIG. 4.

Temperature dependence of the junction resistance of the heterostructure for the bias under the applied magnetic field. Inset displays the temperature dependence of MR at and .

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/content/aip/journal/apl/92/11/10.1063/1.2900963
2008-03-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Positive colossal magnetoresistance effect in ZnO∕La0.7Sr0.3MnO3 heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/11/10.1063/1.2900963
10.1063/1.2900963
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