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X-ray diffraction pattern of the heterostructure. The insets show the (100) and (200) peaks of the LSMO film and substrate.
Current-voltage characteristics of the heterostructure at different temperatures. Inset: the schematic circuit of the heterostructure. The voltage polarity is defined as the electrode on the LSMO layer.
Current-voltage characteristics of the heterostructure under the applied magnetic field at and .
Temperature dependence of the junction resistance of the heterostructure for the bias under the applied magnetic field. Inset displays the temperature dependence of MR at and .
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