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High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control
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10.1063/1.2901036
/content/aip/journal/apl/92/11/10.1063/1.2901036
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/11/10.1063/1.2901036
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized of devices with and . The shifts of the rare-earth capped dielectric stack are compared to that of a control dielectric stack of . All samples were annealed at for in nitrogen.

Image of FIG. 2.
FIG. 2.

Aberration-corrected HAADF images from the as-deposited [(a) and (c)], annealed [(b) and (d)] and samples, respectively.

Image of FIG. 3.
FIG. 3.

HAADF image of a crystallite extending from the into the HfSiON layer after the annealing. To serve as a visual guide, approximate interfaces between the layers have been marked.

Image of FIG. 4.
FIG. 4.

Center and right column: edges extracted from EELS line profiles across the gate stacks recorded from the positions (1–5) indicated in the HAADF images (left column). Top row: as deposited and annealed stack. Bottom row: as deposited and annealed stack. Note that the amount of rare earth detected within the HfSiON layer did not change significantly upon annealing. The positions indicated in the HAADF images were corrected for sample drift with (1) being in the interfacial , (2) at the interface, (3) and (4) in the HfSiON, and (5) in the rare-earth oxide.

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/content/aip/journal/apl/92/11/10.1063/1.2901036
2008-03-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/11/10.1063/1.2901036
10.1063/1.2901036
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