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Anomalous -channel amorphous oxide transistors based on tin oxide and their complementary circuits
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10.1063/1.2898217
/content/aip/journal/apl/92/12/10.1063/1.2898217
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/12/10.1063/1.2898217
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of (a) Sn and (b) O for the films before and after annealing.

Image of FIG. 2.
FIG. 2.

AFM image of thin films annealed at .

Image of FIG. 3.
FIG. 3.

(a) The drain current as a function of drain voltage at various gate voltages for the top-contact TFTs and (b) The transfer curve at for various gate voltages.

Image of FIG. 4.
FIG. 4.

The measured transfer characteristics of inverter and its corresponding gain at a supply voltage of . Inset: The schematic of the inverter circuit comprising of two bottom contact TFTs annealed at different temperatures.

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/content/aip/journal/apl/92/12/10.1063/1.2898217
2008-03-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/12/10.1063/1.2898217
10.1063/1.2898217
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