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Ultraviolet emission from Sb-doped -type ZnO based heterojunction light-emitting diodes
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View: Figures


Image of FIG. 1.
FIG. 1.

SIMS data of Sb-doped (100) sample. The elemental profiles of Sb dopant, Zn, and Si substrate can be seen.

Image of FIG. 2.
FIG. 2.

Temperature dependent characteristics of the ZnO-based heterojunction device. Semilog plot of the characteristics is shown as the inset.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependent EL spectra obtained at an injection current of . EL from LED is obtained at 9, 50, 100, 200, and and (b) temperature dependent EL spectra in the UV region only. The dotted line indicates the trend of the redshift of the near-band edge emission from at to about at due to temperature induced band gap variations. The near-band edge emission becomes very weak at and merges with the UV peak originated from the radiative recombination between conduction band and the Zn vacancy acceptor level. This peak also redshifts from at at due to the similar temperature induced effect.

Image of FIG. 4.
FIG. 4.

Injection current dependent EL spectra obtained at room temperature.

Image of FIG. 5.
FIG. 5.

PL spectra from the as-grown sample at and .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes