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SIMS data of Sb-doped (100) sample. The elemental profiles of Sb dopant, Zn, and Si substrate can be seen.
Temperature dependent characteristics of the ZnO-based heterojunction device. Semilog plot of the characteristics is shown as the inset.
(a) Temperature dependent EL spectra obtained at an injection current of . EL from LED is obtained at 9, 50, 100, 200, and and (b) temperature dependent EL spectra in the UV region only. The dotted line indicates the trend of the redshift of the near-band edge emission from at to about at due to temperature induced band gap variations. The near-band edge emission becomes very weak at and merges with the UV peak originated from the radiative recombination between conduction band and the Zn vacancy acceptor level. This peak also redshifts from at at due to the similar temperature induced effect.
Injection current dependent EL spectra obtained at room temperature.
PL spectra from the as-grown sample at and .
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