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Far-infrared reflectivity as a probe of point defects in Zn- and Cd-doped HgTe
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10.1063/1.2902175
/content/aip/journal/apl/92/12/10.1063/1.2902175
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/12/10.1063/1.2902175
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Imaginary part of the dielectric function of three HgZnTe samples with a different ZnTe content .

Image of FIG. 2.
FIG. 2.

Spectra of the imaginary part of the dielectric function of two HgCdTe samples with . and types refer to low and high concentrations of Hg vacancies, respectively.

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/content/aip/journal/apl/92/12/10.1063/1.2902175
2008-03-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Far-infrared reflectivity as a probe of point defects in Zn- and Cd-doped HgTe
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/12/10.1063/1.2902175
10.1063/1.2902175
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