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Far-infrared reflectivity as a probe of point defects in Zn- and Cd-doped HgTe
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13.In some papers devoted to this subject [see, for example, P. M. Amirtharaj, N. K. Dhart, J. Baars, and H. Seelewind, Semicond. Sci. Technol. 5, S68 (1990)], the condition of high electron mobility, e.g., at low level of or low concentration of Hg vacancies, for the samples where the FIR spectra of -type HgCdTe was measured, probably was not fulfilled.
16.The frequencies of Hg–Te oscillations in the vacancy-bearing tetrahedra and in the defect-free tetrahedra are different.
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19.D. W. Taylor, in Optical Properties of Mixed Crystals, edited by R. J. Elliot and I. P. Ipatova (Elsevier Science, Amsterdam, 1988), pp. 35–131.
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