1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electroluminescence of heterojunction
Rent:
Rent this article for
USD
10.1063/1.2902299
/content/aip/journal/apl/92/12/10.1063/1.2902299
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/12/10.1063/1.2902299
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Morphology, crystal structure, and optical property of the Sn film deposited by EBE and annealed at for under ambient : (a) planar and (b) cross-sectional FESEM images, (c) XRD pattern, and (d) UV-visible absorption and room temperature PL spectra.

Image of FIG. 2.
FIG. 2.

(a) Schematic diagram of the heterojunction device; characteristics of (b) the heterojunction and (c) the contact.

Image of FIG. 3.
FIG. 3.

Room temperature EL spectra of the heterojunction under different forward biases. The forward bias is defined as the positive voltage applied on the silicon substrate. In the inset is the CCD image of the light emission when the device is under forward bias.

Image of FIG. 4.
FIG. 4.

Energy-band diagram for heterojunction (a) at thermal equilibrium and (b) under forward bias. The mechanism of the light emission is indicated in the diagram.

Loading

Article metrics loading...

/content/aip/journal/apl/92/12/10.1063/1.2902299
2008-03-25
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electroluminescence of SnO2∕p-Si heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/12/10.1063/1.2902299
10.1063/1.2902299
SEARCH_EXPAND_ITEM