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Morphology, crystal structure, and optical property of the Sn film deposited by EBE and annealed at for under ambient : (a) planar and (b) cross-sectional FESEM images, (c) XRD pattern, and (d) UV-visible absorption and room temperature PL spectra.
(a) Schematic diagram of the heterojunction device; characteristics of (b) the heterojunction and (c) the contact.
Room temperature EL spectra of the heterojunction under different forward biases. The forward bias is defined as the positive voltage applied on the silicon substrate. In the inset is the CCD image of the light emission when the device is under forward bias.
Energy-band diagram for heterojunction (a) at thermal equilibrium and (b) under forward bias. The mechanism of the light emission is indicated in the diagram.
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