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Effect of strain compensation on quantum dot enhanced GaAs solar cells
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10.1063/1.2903699
/content/aip/journal/apl/92/12/10.1063/1.2903699
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/12/10.1063/1.2903699

Figures

Image of FIG. 1.
FIG. 1.

Simplified energy band diagram illustrating the design of the strain compensated QD enhanced solar cell. The diagram is generated near the region of a solar cell containing InAs QDs with GaP SC.

Image of FIG. 2.
FIG. 2.

1 sun AM0 current density vs voltage curves for the baseline GaAs cell and QD enhanced cells both with and without SC. The cells were without an antireflection coating and had areas of with grid shadowing.

Image of FIG. 3.
FIG. 3.

(a) External QE of the baseline GaAs solar cell and both the uncompensated and strain compensated QD enhanced solar cells. (b) EL spectra ( bias current) and spectral response for the strain compensated QD enhanced cell.

Tables

Generic image for table
Table I.

Open circuit voltage, short circuit current density, efficiency, FF, and dark diode characteristics for baseline cell and QD enhanced cells with and without SC. The devices did not contain antireflection coatings.

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/content/aip/journal/apl/92/12/10.1063/1.2903699
2008-03-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of strain compensation on quantum dot enhanced GaAs solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/12/10.1063/1.2903699
10.1063/1.2903699
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