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Quantitative analysis of electronic transport through weakly coupled metal/organic interfaces
1.S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
5.T. Nishikawa, S.-I. Kobayashi, T. Nakanowatari, T. Mitani, T. Shimoda, Y. Kubozono, G. Yamamoto, H. Ishii, M. Niwano, and I. Iwasa, J. Appl. Phys. 97, 104509 (2005).
11.E. H. Rhoderick, Metal-Semiconductor Contacts (Clarendon, Oxford, 1980).
13.T. Takenobu (unpublished).
14.W. Mönch, Surf. Sci. 299/300, 928 (1994).
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Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be quantitatively reproduced in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emphasizes the role of the coupling between metal and molecules, which in our devices is weak due to the presence of an oxide layer at the surface of the copper electrodes.
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