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Enhanced hole mobility in ambipolar rubrene thin film transistors on polystyrene
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Image of FIG. 1.

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FIG. 1.

AFM image of (a) a PS film on , and rubrene thin films on (b) and (c) PS. The difference in rubrene morphology between films on and PS is visible in the cross sections plotted below (b) and (c).

Image of FIG. 2.

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FIG. 2.

(a) Transistor characteristics of thick rubrene films deposited on (circles) and PS (squares). (b) The mobility of holes in the saturation regime of transistor operation as a function of the average thickness of the rubrene film. The channel length for this device was .

Image of FIG. 3.

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FIG. 3.

Plots of vs (squares) and vs (circles) for (a) - and (b) -channel operations. The drain voltages for (a) and (b) are and , respectively. The channel length for this device was .

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/content/aip/journal/apl/92/13/10.1063/1.2904964
2008-03-31
2014-04-24

Abstract

We report amorphous rubrene thin film transistors with a polystyrene intermediate layer on the gate dielectric that have hole mobilities up to . This improvement by two orders of magnitude over devices formed on alone occurs without the crystallization of rubrene. The enhanced charge transport is a result of the more planar growth and subsequent better geometrical connection of the first molecular layers of rubrene. Ambipolar conduction in the rubrene suggests that polystyrene minimizes the concentration of interfacial electron trap states.

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Scitation: Enhanced hole mobility in ambipolar rubrene thin film transistors on polystyrene
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2904964
10.1063/1.2904964
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