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Features of formation and propagation of 60° and 90° misfit dislocations in films caused by Si substrate misorientation from (001)
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10.1063/1.2905267
/content/aip/journal/apl/92/13/10.1063/1.2905267
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2905267
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dark-field TEM plan-view images of film: (a) and (b). Edge dislocations parallel to the arrowed direction are out of contrast.

Image of FIG. 2.
FIG. 2.

Two-beam dark field TEM images of film [(a) and (b)] and dislocation lines arrangement at the interface in the case of the Si (001) substrate tilted 6° about the axis [(c) and (d)]. Schemes.

Image of FIG. 3.
FIG. 3.

Two-beam dark field TEM images of center [(a) and (b)] and dislocation line arrangements nearby [(c) and (d)]. Schemes.

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/content/aip/journal/apl/92/13/10.1063/1.2905267
2008-03-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si(x∼0.4–0.5) films caused by Si substrate misorientation from (001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2905267
10.1063/1.2905267
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