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Features of formation and propagation of 60° and 90° misfit dislocations in films caused by Si substrate misorientation from (001)
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10.1063/1.2905267
/content/aip/journal/apl/92/13/10.1063/1.2905267
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2905267
/content/aip/journal/apl/92/13/10.1063/1.2905267
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/content/aip/journal/apl/92/13/10.1063/1.2905267
2008-03-31
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si(x∼0.4–0.5) films caused by Si substrate misorientation from (001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2905267
10.1063/1.2905267
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