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Scanning electron micrograph (a) of the as-grown InN nanowires used to prepare sample B and (b) of wire B with the individually defined contact pads.
(a) Magnetoresistance of wire A at temperatures between 0.8 and . The measurements show the total two-terminal resistance including the contact resistance. (b) Normalized conductance fluctuations of wire A at .
(a) Root mean square (rms) of the conductance fluctuations of wires A (◻) and B (▵) as a function of temperature. The full and dashed lines show the theoretically expected traces of rms including and excluding thermal averaging, respectively. (b) Correlation field vs temperature for wires A and B. The full lines represent the exponential increase of .
(a) Phase-coherence length of wire A determined from as a function of temperature (⋆). The solid line represents the dependence of above . The dashed line corresponds to the expected temperature dependence of . The wire length is indicated by the dotted line. (b) Corresponding values for wire B.
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