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Dynamic bias temperature instability-like behaviors under Fowler–Nordheim program/erase stress in nanoscale silicon-oxide-nitride-oxide-silicon memories
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10.1063/1.2905272
/content/aip/journal/apl/92/13/10.1063/1.2905272
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2905272
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The P/E cycle evolution of (a) the subthreshold swing and (b) the hysteresis characteristics in the measured NAND-type SONOS memory.

Image of FIG. 2.
FIG. 2.

The schematic energy band diagram illustrating the degradation mechanism in P/E cycled cells subjected to (a) the FN program stress and (b) the FN erase stress, respectively.

Image of FIG. 3.
FIG. 3.

The P/E FN stress time dependence of in (a) the programed cell and (b) the erased cell at various temperatures.

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/content/aip/journal/apl/92/13/10.1063/1.2905272
2008-04-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dynamic bias temperature instability-like behaviors under Fowler–Nordheim program/erase stress in nanoscale silicon-oxide-nitride-oxide-silicon memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2905272
10.1063/1.2905272
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