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Huge positive magnetoresistance in a gated high electron mobility transistor structure at high temperatures
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10.1063/1.2906360
/content/aip/journal/apl/92/13/10.1063/1.2906360
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2906360
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Magnetoresistivity measurements at various temperatures . The inset shows the measured 2DES density as a function of . The linear fit is discussed in the text.

Image of FIG. 2.
FIG. 2.

and as a function of magnetic field at different temperatures . The inset shows as a function of for various temperatures.

Image of FIG. 3.
FIG. 3.

and as a function of magnetic field at various gate voltage for .

Image of FIG. 4.
FIG. 4.

and as a function of magnetic field at various gate voltage for .

Image of FIG. 5.
FIG. 5.

Determined density inhomogeneity . The inset shows MR of two samples with vastly different low-temperature mobilities.

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/content/aip/journal/apl/92/13/10.1063/1.2906360
2008-04-04
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Huge positive magnetoresistance in a gated AlGaAs∕GaAs high electron mobility transistor structure at high temperatures
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2906360
10.1063/1.2906360
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