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ultrafast photoconductive switches based on ErAs:InGaAs
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10.1063/1.2907335
/content/aip/journal/apl/92/13/10.1063/1.2907335
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2907335
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Figures

Image of FIG. 1.
FIG. 1.

(a) Top left panel: Vertical cross section of an ErAs:InGaAs superlattice. The lateral drift and vertical diffusion of photoexcited electrons are schematically illustrated. Top right panel: Top view of an illuminated photoconductive switch. The measurement circuitry has also been included. (b) Photocurrent as a function of the average incident laser power obtained on a set of seven superlattices of different periodicities for a bias voltage of .

Image of FIG. 2.
FIG. 2.

(a) Setup for photocurrent autocorrelation experiments. (b) Typical autocorrelation trace for a bias voltage of and an average optical power per beam path of . The dip results from the photocurrent sub- linearity. The extracted lifetime in this case is . (c) Lifetime of photoexcited electrons as a function of the ErAs:InGaAs superlattice period . The solid line is a power-law fit with exponent 1.26: with in nanometer. Data for (solid circles) were obtained from autocorrelation experiments. The upper inset shows the measurement geometry, a typical trace and fit for sliding-contact measurements. This propagation technique was applied for the 5 and superlattices (open circles).

Image of FIG. 3.
FIG. 3.

(a) Dark currents in the wafers of this study for a bias voltage of at 4.2, 77, 200, and . (b) Dark currents at room temperature in a voltage range suitable for terahertz applications for superlattice periods (from top to bottom) of 100, 64.3, 30, 40, 10, 20, and .

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/content/aip/journal/apl/92/13/10.1063/1.2907335
2008-04-03
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 1.55μm ultrafast photoconductive switches based on ErAs:InGaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/13/10.1063/1.2907335
10.1063/1.2907335
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