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Erratum: “Nucleation mechanism of gallium-assisted Molecular Beam Epitaxy growth of Gallium Arsenide nanowires” [Appl. Phys. Lett. 92, 063112 (2008)]
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FIG. 3.

Cross-sectional transmission electron microscopy analysis of the nucleation stage of GaAs nanowires. (a) High resolution TEM micrograph interface with the substrate, in the case that the GaAs wafer is coated with a 6 nm SiO2 layer. (b) Power spectra analysis of the different areas squared in (a), from which it is possible to deduce a perfect epitaxial relation between the substrate and the nanowire. (c) Bright FTEM micrograph of a nanowire grown on a thick SiO2 layer. The dashed line indicates the presence of a nano-crater in the region where the nanowire nucleates.

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/content/aip/journal/apl/92/14/10.1063/1.2894500
2008-04-11
2014-04-20

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Scitation: Erratum: “Nucleation mechanism of gallium-assisted Molecular Beam Epitaxy growth of Gallium Arsenide nanowires” [Appl. Phys. Lett. 92, 063112 (2008)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2894500
10.1063/1.2894500
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