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Phase transformation behaviors of doped films for application in phase change random access memory
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10.1063/1.2898719
/content/aip/journal/apl/92/14/10.1063/1.2898719
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2898719
/content/aip/journal/apl/92/14/10.1063/1.2898719
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/content/aip/journal/apl/92/14/10.1063/1.2898719
2008-04-11
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2898719
10.1063/1.2898719
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