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Phase transformation behaviors of doped films for application in phase change random access memory
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10.1063/1.2898719
/content/aip/journal/apl/92/14/10.1063/1.2898719
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2898719
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS of as-deposited GST and S-GST: (a) Ge , (b) Sb and O , and (c) Si .

Image of FIG. 2.
FIG. 2.

(a) Variation in as a function of heating rate of GST and S-GST, and (b) Kissinger’s plot where the of GST and S-GST could be achieved. The inset of (a) shows the variation of resistance as a function of temperature of GST film with a heating rate of and its first differential. Vertical red line shows for this case. The inset of (b) shows the variation of as a function of .

Image of FIG. 3.
FIG. 3.

The variations in the heat flow as a function of temperature of GST and S-GST with the different measured by DSC-DTA. Green dashes correspond to the substrate.

Image of FIG. 4.
FIG. 4.

Dark field cross-sectional TEM images of (a) GST, (b) S-GST (: ), and (c) S-GST (: ).

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/content/aip/journal/apl/92/14/10.1063/1.2898719
2008-04-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2898719
10.1063/1.2898719
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