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Impact of template variations on shape and arrangement of quantum dot arrays
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10.1063/1.2907196
/content/aip/journal/apl/92/14/10.1063/1.2907196
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2907196
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Figures

Image of FIG. 1.
FIG. 1.

(a), (b) AFM scans of EUV-IL pit patterns with a periodicity of after Si buffer growth. The patterns differ in the EUV-IL exposure dose: (a) lower dose and (b) higher dose. Overgrowth of the pattern in (a), (b) with 7 ML of Ge results in the formation of (c) QDA with separated dome clusters and (d) QDM with four Ge huts per pit, respectively. (e) Size and height distributions of the QDAs are shown in (c) and (d).

Image of FIG. 3.
FIG. 3.

(a), (b) Cross-section -contrast TEM images of 6 period/ 11 period QD stacks deposited on lower/higher exposed EUV-IL patterned Si substrates, respectively.

Image of FIG. 2.
FIG. 2.

(a), (b) The QDAs in Figs. 1(c) and 1(d) were additionally stacked by 5 periods/ 10 periods of layers, respectively (see text for more information about the recipe). The symmetry of the first layer is retained after stacking and a flattening of the Si matrix is observable.

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/content/aip/journal/apl/92/14/10.1063/1.2907196
2008-04-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of template variations on shape and arrangement of Si∕Ge quantum dot arrays
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2907196
10.1063/1.2907196
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