No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Fluorine containing derivatives for high-performance electron transporting field-effect transistors and integrated circuits
1.B. K. Crone, A. Dodabalapur, Y.-Y. Lin, R. W. Fillas, Z. Bao, A. LaDuca, R. Sarpeshkar, H. E. Katz, and W. Li, Nature (London) 403, 521 (2000).
5.H. E. Katz, A. J. Lovinger, J. Johnson, C. Kloc, T. Siegrist, W. Li, Y.-Y. Lin, and A. Dodabalapur, Nature (London) 404, 478 (2000).
9.M. Prato and M. Maggini, Acc. Chem. Res. 31, 519 (1998).
10.J. C. Hummelen, B. W. Knight, F. LePeq, F. Wudl, J. Yao, and C. L. J. Wilkins, Org. Chem. 60, 532 (1995).
Article metrics loading...
We report on electron transporting organic transistors and integrated ring oscillators based on four different solution processible fluorine containing derivatives. Electron mobilities up to are obtained from as-prepared bottom-gate, bottom-contact transistors utilizing gold source-drain electrodes. Despite the high mobility, no long-range structural order could be identified with the semiconductor films exhibiting amorphouslike characteristics. The good electron transport is attributed to the structural symmetry of the fullerene derivatives and the enhanced interactions between units even in the case of amorphouslike films. These advantageous characteristics make fluorine containing derivatives attractive for application in high-performance, large-area organic electronics.
Full text loading...
Most read this month