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Fluorine containing derivatives for high-performance electron transporting field-effect transistors and integrated circuits
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/content/aip/journal/apl/92/14/10.1063/1.2907348
2008-04-10
2014-09-22

Abstract

We report on electron transporting organic transistors and integrated ring oscillators based on four different solution processible fluorine containing derivatives. Electron mobilities up to are obtained from as-prepared bottom-gate, bottom-contact transistors utilizing gold source-drain electrodes. Despite the high mobility, no long-range structural order could be identified with the semiconductor films exhibiting amorphouslike characteristics. The good electron transport is attributed to the structural symmetry of the fullerene derivatives and the enhanced interactions between units even in the case of amorphouslike films. These advantageous characteristics make fluorine containing derivatives attractive for application in high-performance, large-area organic electronics.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fluorine containing C60 derivatives for high-performance electron transporting field-effect transistors and integrated circuits
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2907348
10.1063/1.2907348
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