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Fluorine containing derivatives for high-performance electron transporting field-effect transistors and integrated circuits
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We report on electron transporting organic transistors and integrated ring oscillators based on four different solution processible fluorine containing derivatives. Electron mobilities up to are obtained from as-prepared bottom-gate, bottom-contact transistors utilizing gold source-drain electrodes. Despite the high mobility, no long-range structural order could be identified with the semiconductor films exhibiting amorphouslike characteristics. The good electron transport is attributed to the structural symmetry of the fullerene derivatives and the enhanced interactions between units even in the case of amorphouslike films. These advantageous characteristics make fluorine containing derivatives attractive for application in high-performance, large-area organic electronics.
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