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Tuning of Ag work functions by self-assembled monolayers of aromatic thiols for an efficient hole injection for solution processed triisopropylsilylethynyl pentacene organic thin film transistors
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Figures

Image of FIG. 1.

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FIG. 1.

(a) Bottom contact OTFT with TIPS-pentacene active layer. (b) Energy level diagrams of TP-Ag, pristine Ag, 4-FTP-Ag, PFTP-Ag electrode, and TIPS-pentacene.

Image of FIG. 2.

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FIG. 2.

Electrical characteristics of the TIPS-pentacene OTFT devices ( , ) with various electrodes: (a) pristine Ag, (b) TP-Ag, (c) 4-FTP-Ag, and (d) PFTP-Ag electrode.

Image of FIG. 3.

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FIG. 3.

Electrical characteristics of the OTFTs with various SAM-treated Ag electrodes in the linear region (with the gate-source voltage fixed at ). TP-Ag, Ag, 4-FTP-Ag, and PFTP-Ag electrode are marked with ◼, ●, ▴, and ▾, respectively.

Image of FIG. 4.

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FIG. 4.

Square-root of drain current and drain current plotted on a log scale as a function of gate-source voltage for TIPS-pentacene OTFTs with various SAM-treated Ag electrodes. TP-Ag, Ag, 4-FTP-Ag, and PFTP-Ag electrode are marked with ◼, ●, ▴, and ▾, respectively.

Image of FIG. 5.

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FIG. 5.

The stability and reliability of the mobility value over the repeated operations up to .

Tables

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Table I.

Overview of the electrical properties of the bottom contact TIPS-pentacene OTFT devices ( , ) with various electrodes: TP-Ag, Ag, 4-FTP-Ag, PFTP-Ag electrode.

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/content/aip/journal/apl/92/14/10.1063/1.2907691
2008-04-11
2014-04-17

Abstract

We demonstrate tuning of hole injection barriers in bottom contact triisopropylsilylethynyl pentacene (TIPS-pentacene) organic thin film transistors (OTFTs) by forming the self-assembled monolayers (SAMs) of thiophenol, 4-fluorothiophenol, or pentafluorothiophenol on the pristine Ag electrode. The work functions of SAM-treated Ag electrodes are measured by Kelvin probe method. The TIPS-pentacene OTFT devices were fabricated by a drop-cast method with a micropipette like an inkjet printing. The OTFTs with pentafluorothiophenol-Ag electrodes as source and drain exhibit carrier mobility of and on/off current ratio of because of almost no hole injection barrier to TIPS pentacenes. The SAM-treated Ag electrodes are robust over repeated electrical scans of .

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Scitation: Tuning of Ag work functions by self-assembled monolayers of aromatic thiols for an efficient hole injection for solution processed triisopropylsilylethynyl pentacene organic thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2907691
10.1063/1.2907691
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