1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Nickel oxide-induced crystallization of silicon for use in thin film transistors with a diffusion filter
Rent:
Rent this article for
USD
10.1063/1.2908036
/content/aip/journal/apl/92/14/10.1063/1.2908036
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2908036
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A schematic of the NiO-induced crystallization with the diffusion filter.

Image of FIG. 2.
FIG. 2.

The Ni content of the NiO as a function of the sputter time observed from the depth profile by the TOF-SIMS before furnace crystallization.

Image of FIG. 3.
FIG. 3.

The SEM images of the NiO-induced crystallized poly-Si films annealed at for (a), (b), and (c).

Image of FIG. 4.
FIG. 4.

The SEM image of the NiO-induced crystallized poly-Si TFTs with on a grain.

Image of FIG. 5.
FIG. 5.

The transfer (a) and output (b) characteristics of the NiO-induced crystallized poly-Si TFTs with .

Image of FIG. 6.
FIG. 6.

The field-effective mobility as a function of the .

Loading

Article metrics loading...

/content/aip/journal/apl/92/14/10.1063/1.2908036
2008-04-07
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nickel oxide-induced crystallization of silicon for use in thin film transistors with a SiNx diffusion filter
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2908036
10.1063/1.2908036
SEARCH_EXPAND_ITEM