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A schematic of the NiO-induced crystallization with the diffusion filter.
The Ni content of the NiO as a function of the sputter time observed from the depth profile by the TOF-SIMS before furnace crystallization.
The SEM images of the NiO-induced crystallized poly-Si films annealed at for (a), (b), and (c).
The SEM image of the NiO-induced crystallized poly-Si TFTs with on a grain.
The transfer (a) and output (b) characteristics of the NiO-induced crystallized poly-Si TFTs with .
The field-effective mobility as a function of the .
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