1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
f
Thermally stable polymer memory devices based on a -conjugated triad
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/92/14/10.1063/1.2908168
1.
1.J. C. Scott and L. D. Bozano, Adv. Mater. (Weinheim, Ger.) 19, 1452 (2007).
http://dx.doi.org/10.1002/adma.200602564
2.
2.S. Moller, C. Perlov, W. Jackson, C. Taussig, and S. R. Forrest, Nature (London) 426, 166 (2003).
http://dx.doi.org/10.1038/nature02070
3.
3.S. Smith and S. R. Forrest, Appl. Phys. Lett. 84, 5019 (2004).
http://dx.doi.org/10.1063/1.1763632
4.
4.X. Xu, R. A. Register, and S. R. Forrest, Appl. Phys. Lett. 89, 142109 (2006).
5.
5.J. Ouyang, C. W. Chu, C. R. Szmanda, L. P. Ma, and Y. Yang, Nat. Mater. 3, 918 (2004).
http://dx.doi.org/10.1038/nmat1269
6.
6.C. W. Chu, J. Ouyang, H. H. Tseng, and Y. Yang, Adv. Mater. (Weinheim, Ger.) 17, 1440 (2005).
http://dx.doi.org/10.1002/adma.200500225
7.
7.H. S. Majumdar, A. Bandyopadhyay, and A. J. Pal, Org. Electron. 4, 39 (2003).
http://dx.doi.org/10.1016/S1566-1199(03)00007-7
8.
8.A. Bandhopadhyay and A. J. Pal, J. Phys. Chem. B 107, 2531 (2003).
http://dx.doi.org/10.1021/jp027369q
9.
9.B. Mukherjee and A. J. Pal, Chem. Mater. 19, 1382 (2007).
http://dx.doi.org/10.1021/cm062828b
10.
10.B. Mukherjee, S. K. Batabyal, and A. J. Pal, Adv. Mater. (Weinheim, Ger.) 19, 717 (2007).
http://dx.doi.org/10.1002/adma.200601490
11.
11.A. Bandyopadhyay and A. J. Pal, Adv. Mater. (Weinheim, Ger.) 15, 1949 (2003).
http://dx.doi.org/10.1002/adma.200305309
12.
12.D. G. Ma, M. Aguiar, J. A. Freire, and I. A. Hummelgen, Adv. Mater. (Weinheim, Ger.) 12, 1063 (2000).
http://dx.doi.org/10.1002/1521-4095(200007)12:14<1063::AID-ADMA1063>3.0.CO;2-9
13.
13.J. F. Fang, H. You, J. S. Chen, J. Lin, and D. G. Ma, Inorg. Chem. 45, 3701 (2006).
http://dx.doi.org/10.1021/ic051783y
14.
14.S. Baek, D. Lee, J. Kim, S. H. Hong, O. Kim, and M. Ree, Adv. Funct. Mater. 17, 2637 (2007).
http://dx.doi.org/10.1002/adfm.200600892
15.
15.A. Rahman and M. K. Sanyal, Adv. Mater. (Weinheim, Ger.) 19, 3956 (2007).
http://dx.doi.org/10.1002/adma.200700753
16.
16.C. Pearson, J. H. Ahn, M. F. Mabrook, D. A. Zeze, M. C. Petty, K. T. Kamtekar, C. Wang, M. R. Bryce, P. Dimitrakis, and D. Tsoukalas, Appl. Phys. Lett. 91, 123506 (2007).
http://dx.doi.org/10.1063/1.2783481
17.
17.R. J. Tseng, C. O. Baker, B. Shedd, J. Huang, R. B. Kaner, J. Ouyang, and Y. Yang, Appl. Phys. Lett. 90, 531011 (2007).
http://dx.doi.org/10.1063/1.2434167
18.
18.A. Kanwal and M. Chhowalla, Appl. Phys. Lett. 89, 203103 (2006).
19.
19.S. Paul, IEEE Trans. Nanotechnol. 6, 191 (2007).
20.
20.A. Du Pasquier, H. E. Unalan, A. Kanwal, S. Miller, and M. Chhowalla, Appl. Phys. Lett. 87, 203511 (2005).
http://dx.doi.org/10.1063/1.2132065
21.
21.S. Paul, A. Kanwal, and M. Chhowalla, Nanotechnology 17, 145 (2006).
http://dx.doi.org/10.1088/0957-4484/17/1/023
22.
22.Q. D. Ling, D. J. Liaw, E. Y. H. Teo, C. X. Zhu, D. S. H. Chan, E. T. Kang, and K. G. Neoh, Polymer 48, 5182 (2007).
http://dx.doi.org/10.1016/j.polymer.2007.06.025
23.
23.Q. D. Ling, Y. Song, S. J. Ding, C. X. Zhu, D. S. Chan, D. L. Kwong, E. T. Kang, and K. G. Neoh, Adv. Mater. (Weinheim, Ger.) 17, 455 (2005).
http://dx.doi.org/10.1002/adma.200401048
24.
24.Y. Song, Y. P. Tan, E. Y. H. Teo, C. X. Zhu, D. S. H. Chan, Q. D. Ling, K. G. Neoh, and E. T. Kang, J. Appl. Phys. 100, 084508 (2006).
25.
25.Q. D. Ling, Y. Song, S. L. Lim, E. Y. H. Teo, Y. P. Tan, C. X. Zhu, D. S. H. Chan, D. L. Kwong, E. T. Kang, and K. G. Neoh, Angew. Chem., Int. Ed. 45, 2947 (2006).
http://dx.doi.org/10.1002/anie.200504365
26.
26.International Technology Roadmap for Semiconductors (ITRS), 2005 ed. (Semiconductor Industry Association, Austin, TX, 2005).
27.
27.C. Ego, A. C. Grimsdale, F. Uckert, G. Yu, G. Srdanov, and K. Muellen, Adv. Mater. (Weinheim, Ger.) 14, 809 (2002).
http://dx.doi.org/10.1002/1521-4095(20020605)14:11<809::AID-ADMA809>3.0.CO;2-8
28.
28.Gaussian 03, Revision D.01 (Gaussian, Wallingford, CT, 2004).
29.
29.G. Dearnaley, D. V. Morgan, and A. M. Stoneham, J. Non-Cryst. Solids 4, 593 (1970).
http://dx.doi.org/10.1016/0022-3093(70)90097-9
30.
30.W. Hwang and K. C. Kao, J. Chem. Phys. 60, 3845 (1974).
http://dx.doi.org/10.1063/1.1680828
31.
31.B. L. Gel and K. D. Tsendin, Sov. Phys. Semicond. 10, 665 (1976).
32.
journal-id:
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2908168
Loading
View: Figures

Figures

Image of FIG. 1.

Click to view

FIG. 1.

Molecular structure and orbitals (optimized by DFT HF/6-21G method) of the conjugated polymer triad (DR1-PDPAF-DR1), and the plausible excitation and charge separation processes.

Image of FIG. 2.

Click to view

FIG. 2.

The characteristics of the ITO/DR1-PAPDF-DR1/Aldevice (active area: ). The inset shows the device structure.

Image of FIG. 3.

Click to view

FIG. 3.

Dependant of the on- and off-state current on the device area and testing temperature.

Image of FIG. 4.

Click to view

FIG. 4.

Stability test of the memory device in either on or off state under constant voltage stress or stimulus by read pulses. The insets show the on/off current ratio for the same sweep and the pulse shape used in the measurement.

Loading

Article metrics loading...

/content/aip/journal/apl/92/14/10.1063/1.2908168
2008-04-08
2014-04-20

Abstract

Polymermemory devices based on a -conjugated poly [9,9-bis(4-diphenylaminophenyl)-2,7-fluorene] covalently bridged, Disperse Red 1 (a dye) triad were fabricated. The devices exhibit electrical bistability in the characteristics and can be used to perform read-write-erase memory functions. The memory devices exhibit good performance with an on/off current ratio up to and stable on and off states under a constant voltage stress and read pulses. Furthermore, memory retention tests show that it is possible to preserve both states at under ambient atmosphere for about when using Cu as the top electrode.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/92/14/1.2908168.html;jsessionid=1m8r4bzavs2jq.x-aip-live-03?itemId=/content/aip/journal/apl/92/14/10.1063/1.2908168&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally stable polymer memory devices based on a π-conjugated triad
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2908168
10.1063/1.2908168
SEARCH_EXPAND_ITEM