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Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Dielectric
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10.1063/1.2908926
/content/aip/journal/apl/92/14/10.1063/1.2908926
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2908926
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured current density vs bias voltage of an MOS diode (a) and Fowler–Nordheim tunneling fitting of the MOS diode (b), where is the electric field inside the oxide and is the current density.

Image of FIG. 2.
FIG. 2.

Measured multifrequency curve of an MOS capacitor (a) and simulated ideal curve of InAs without interface states and charges (b).

Image of FIG. 3.
FIG. 3.

Schematic layer structure of the large-feature size MOSFET.

Image of FIG. 4.
FIG. 4.

Measured characteristics of the fabricated MOSFET. Measured total drain current vs drain bias at gate voltage steps of (a). Net channel current vs drain bias at gate voltage steps of (b). Net channel current and transconductance vs gate bias at (c). Measured temperature dependence of the leakage current at different drain biases (d).

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/content/aip/journal/apl/92/14/10.1063/1.2908926
2008-04-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/14/10.1063/1.2908926
10.1063/1.2908926
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