Full text loading...
Measured current density vs bias voltage of an MOS diode (a) and Fowler–Nordheim tunneling fitting of the MOS diode (b), where is the electric field inside the oxide and is the current density.
Measured multifrequency curve of an MOS capacitor (a) and simulated ideal curve of InAs without interface states and charges (b).
Schematic layer structure of the large-feature size MOSFET.
Measured characteristics of the fabricated MOSFET. Measured total drain current vs drain bias at gate voltage steps of (a). Net channel current vs drain bias at gate voltage steps of (b). Net channel current and transconductance vs gate bias at (c). Measured temperature dependence of the leakage current at different drain biases (d).
Article metrics loading...